Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) Based Ternary Combinational Logic Circuits

The capability of multiple valued logic (MVL) circuits to achieve higher storage density when compared that existing binary is highly impressive. Recently, MVL have attracted significant attention for the design digital systems. Carbon nanotube field effect transistors (CNTFETs) shown great promise based circuits, due fact scalable threshold voltage CNTFETs can be utilized easily designs. In addition, resistive random access memory (RRAM) also a feasible option owing its multilevel cell enables resistance states within single cell. this manuscript, approach ternary combinational while using and RRAM presented. designs half adder, subtractor, full subtractor are evaluated Synopsis HSPICE simulation software with standard 32 nm CNTFET technology under different operating conditions, including supply voltages, output load variation, temperatures. Finally, proposed state-of-the-art Based on obtained results, show reduction in transistor count, decreased area, lower power consumption. participation RRAM, advantages terms non-volatility.